3/11/99 db91075m-aas/a1 0.26 20.32 19.32 4.0 3.0 0.5 7.62 13 max 7.0 6.0 2.54 1.2 0.5 3.0 1.2 3.0 4.0 3.0 3.35 7.0 6.0 0.5 0.5 7.62 1 2 4 3 0.26 13 max 2.54 3.0 10.16 9.16 4.0 3.0 3.35 0.5 7.0 6.0 7.62 2 3 4 7 6 5 1.2 13 max 0.5 0.26 2.54 dimensions in mm high density mounting phototransistor optically coupled isolators approvals l ul recognised, file no. e91231 'x' specification approvals l vde 0884 in 3 available lead form : - -std - g form - smd approved to cecc 00802 l l certified to en60950 by the following test bodies :- nemko - certificate no. p96102022 fimko - registration no. 192313-01..25 semko - reference no. 9639052 01 demko - reference no. 305969 description the isp321-1 , ISP321-2 , isp321-4 series of optically coupled isolators consist of infrared light emitting diodes and npn silicon photo transistors in space efficient dual in line plastic packages. features l options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. l high current transfer ratio ( 50% min) l high isolation voltage (5.3kv rms ,7.5kv pk ) l high bv ceo ( 80vmin ) l all electrical parameters 100% tested l custom electrical selections available applications l computer terminals l industrial systems controllers l measuring instruments l signal transmission between systems of different potentials and impedances 3.35 5.08 4.08 1 8 isp321-1x isp321-1 ISP321-2x ISP321-2 isp321-4x isp321-4 isp321-1x, ISP321-2x, isp321-4x isp321-1, ISP321-2, isp321-4 1 2 3 7 8 16 15 10 9 6 11 5 12 14 4 13 isocom inc 1024 s. greenville ave, suite 240, allen, tx 75002 usa tel: (214) 495-0755 fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, ts25 1yd england tel: (01429)863609 fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com option g 7.62 surface mount option sm 10.16 10.46 9.86 0.26 0.6 0.1 1.25 0.75
db91075m-aas/a1 parameter min typ max units test condition input forward voltage (v f ) 1.0 1.15 1.3 v i f = 10ma reverse voltage (v r ) 5 v i r = 10 m a reverse current (i r ) 10 m a v r = 5v output collector-emitter breakdown (bv ceo ) 80 v i c = 0.5ma ( note 2 ) emitter-collector breakdown (bv eco ) 6 v i e = 100 m a collector-emitter dark current (i ceo ) 100 na v ce = 48v coupled current transfer ratio (ctr) (note 2) isp321-1, ISP321-2, isp321-4 50 600 % 5ma i f , 5v v ce ctr selection available gb 100 600 % bl 200 600 % gb 30 % 1ma i f , 0.4v v ce collector-emitter saturation voltagev ce (sat) 0.4 v 8ma i f , 2.4ma i c gb 0.4 v 1ma i f , 0.2ma i c input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk input-output isolation resistance r iso 5x10 10 w v io = 500v (note 1) rise time tr 2 m s v cc = 10v , fall time tf 3 m s i c = 2ma, r l = 100 w turn-on time ton 3 m s turn-off time toff 3 m s note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. 3/11/99 electrical characteristics ( t a = 25c unless otherwise noted ) absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 125c operating temperature -55c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 50ma reverse voltage 6v power dissipation 70mw output transistor collector-emitter voltage bv ceo 80v emitter-collector voltage bv eco 6v power dissipation 150mw power dissipation total power dissipation 200mw (derate linearly 2.67mw/ c above 25c)
db91075m-aas/a1 3/11/99 50 -30 0 25 50 75 100 125 ambient temperature t a ( c ) 150 0 200 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 0 40 50 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature -30 0 25 50 75 100 ambient temperature t a ( c ) collector-emitter voltage v ce ( v ) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 100 t a = 25c 0 5 10 15 20 25 0 0.04 0.08 0.12 0.16 0.20 0.24 0.28 i f = 5ma i c = 1ma forward current i f (ma) collector current vs. low collector-emitter voltage 5 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 collector current i c (ma) i f = 2ma collector current vs. collector-emitter voltage collector-emitter voltage v ce ( v ) collector current i c (ma) current transfer ratio vs. forward current forward current i f (ma) current transfer ratio ctr (%) v ce = 5v t a = 25c 1 2 5 10 20 50 0 80 120 160 200 240 0 2 4 6 8 10 0 10 20 30 40 50 40 50 30 20 10 15 t a = 25c 280 320 i f = 5ma
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